features ? low equivalent on - resistance marking: 449 m axim um r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 50 v v ceo collector - emitter voltage 30 v v ebo emitter - base voltage 5 v i c collector current 1 a p c collector power dissipation 200 m w r ja thermal resistance from j u nction to a mbient 625 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 1 m a, i e =0 5 0 v collector - emitter breakdown voltage v (br) c e o i c = 1 0 ma, i b =0 30 v emitter - base breakdown voltage v (br)eb o i e = 10 0 a , i c =0 5 v collector cut - off current i cbo v cb = 4 0 v, i e =0 0.1 a emitter cut - off current i ebo v eb = 4 v, i c =0 0.1 a h fe (1) * v ce = 2 v, i c = 50m a 70 h fe (2) * v ce = 2 v, i c = 500 ma 100 300 h fe (3) * v ce = 2 v, i c = 1 a 80 dc current gain h fe (4) * v ce = 2 v, i c = 2 a 40 v ce(sat) 1 * i c = 1 a, i b = 100 ma 0.5 v collector - emitter saturation voltage v c e(sat) 2 * i c = 2 a, i b = 200 ma 1 v b ase - emitter saturation voltage v b e(sat) * i c = 1 a, i b = 100 ma 1.25 v b ase - emitter voltage v b e * v ce = 2 v, i c = 1 a 1 v transition frequency f t v ce = 1 0 v,i c = 5 0 ma , f=1 00 mhz 150 mhz collector output capacitance c ob v cb = 10 v, i e =0, f=1 m hz 15 pf * p ulse test so t C 23 1. base 2. emitter 3. collector transistor (npn) fmmt 449 1 date:2011/05 www.htsemi.com semiconductor jinyu
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